Features:
FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory, and with a clock up to 20 MHz.
Each byte can be read and written instantaneously, and the memory can be kept for long term at room temperature.
Specification:
Address: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
Package List:
2 x MB85RC256V FRAM Breakout Board