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BOJACK IRLB3034 New MOS FET Transistor N-Channel Enhanced Conductive Element（Pack of 5）

KWD 4.500
Brand
BOJACK
Weight
42 g
– 1 +

Special Features

  • Perfect packaging safe convenient and timely transportation
  • Package：TO-220AB
  • Power consumption Pd at 375W at 25°C
  • Enhanced body diode dV/dt and dI/dt Capability
  • Widely used in electric vehicles LED lighting smart home security monitoring communication transmission electrical power supply toys and network computers etc

Description

Electrical parameters:

Continuous drain current Id: 195A
Drain-source voltage Vds: 40V
Drain-source on-resistance: 1.7Ω
Rds (on) test voltage Vgs: 10V
Power consumption Pd: 375W
Maximum working temperature: 175°C
Minimum working temperature: -55°C

Package Included:
5* IRLB3034

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