Manufactured in planar technology with “base island” layout and monolithic Darlington configuration
Collector-emitter sustaining voltage - VCEO (sus) = 60 V (minimum)
Collector-emitter saturation voltage - VCE (sat) = 2 V (maximum) at IC = 3 A
Monolithic construction with built-in base-emitter shunt resistors
Designed for general-purpose amplifier and low speed switching applications
وصف
The STMicroelectronics TIP120 Darlington Transistors are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.