Product Description:
The power MOSFET IRF3205 is manufactured using advanced process technology and has a very low on-resistance
IRF3205 is a high-current N-channel MOSFET capable of switching currents up to 110A and voltages up to 55V
The specialty of MOSFETs is that they have a very low on-resistance of only 8.0mΩ, making them suitable for switching circuits such as inverters, motor speed control, DC-DC converters, etc
It is important to note that IRF3205 has a high threshold voltage and is therefore not suitable for on/off control of embedded controllers
Available in a TO-220AB package
Port Description:
1. Gate G controls the bias of the MOS transistor
2. The drain D current flows through the drain
3. The source S current flows out through the source
IRF3205 FET parameters:
The drain-source breakdown voltage (V BR (DSS)) is 55V
The gate-to-source voltage (Vgs) is +/- 20V
The threshold voltage (Vg (th)) of the gate is 2 to 4 V
The drain current (Id) is 110A
The pulsed drain current (IMD) is 390A
The power consumption is (PD) of 200W
Drain-to-source on-resistance ( R DS (ON) ) 8mΩ
The leakage current (ISSS) of the door body is 100nA
The total gate charge (Qg) is 146nC
The reverse recovery time (TRR) is 69 to 104ns
Peak diode recovery (dv/dt) is 5V/ns
The rise time (TR) is 101ns
The crust thermal resistance (R th jc) is 75°C/W
The junction temperature (Tj) is between -55 and 175°C