مميزات خاصة

FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz.
Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.

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Features:
FRAM is non-volatile and can easily be read/written 10 trillion times. It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source. The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.

Specification:
Condition: 100% brand new
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V

Package List:
1 x FRAM Breakout Board

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Fram Breakout، لوحة كسر الإطار غير المتطايرة I2C بسعة 32 كيلو بايت، للقراءة والكتابة على الفور، لأجهزة تسجيل البيانات منخفضة الطاقة وتخزين البيانات مؤقتًا

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