The IRLZ44N is utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design , provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
ID (@25°C) max:47 A
Operating Temperature:-55 °C to 175 °C
VDS max:55 V
Ptot max:83 W
RthJC max:1.8 K/W
Package include:
10Pcs *IRLZ44N