Diodes
Product Description
Product Description
Miniature universal dimensions, welding technique
under the protection of vacuum and hydrogen gas
Glass passivated diode chips
Excellent force and volume ratio
High thermal conductive sealing package
Typical Applications
Rectifier current
Industrial automatic control
Digital-controlled machine and remte control system
Product Parameters
symbolic
Parameter name
rating S50
work unit
VB100
VRRM
Reverse Repeat Peak Voltage
1000
V
VRSM
Reverse non-repeating peak voltage
1100
V
symbolic
Parameter name
test condition
rating
IFAV
Forward average current
180°sinusoidal half-wave 50HZ,@Tc=78ºC
50
A
IFSM
Forward surge current
t=10ms,50HZ.Tjm=25ºC
510
A
I²t
I²t worth
1300
A²S
VISO
insulation voltage
50HZ,t=1min,Iiso=1mA(max)
3000
V
Tjm
Rated Junction Temperature
150
ºC
Tj
operating temperature
-40to+150
ºC
Tstg
Storage temperature
-40to+125
ºC
IRRM
Reverse Repeat Peak Current
VR=VRRM sinusoidal half-wave Tj=25ºC
5
uA
VR=VRRM sinusoidal half-wave Tj=150ºC
3
mA
VFM
Forward peak voltage
=25A,T=25ºC
1.1
W
Rth(j-c)
Thermal impedance (junction-shell)
Single-sided heat sink
1.2
ºC/W
Md
Mounting M5
2
N-m
Application
power supply for instruments and equipment
Input for PWM inverter
power supply for battery charging
motor excitation power supply
Input rectification for switching power supplies
Electrical drag and auxiliary currents
Soft-start capacitor charging, inverter fluxing
==========
Hign-concerned Chemical : None
Mean On-State Current : 50A
Model Number : S50vb100
Type : Bridge Rectifier
Encapsulation Structure : Plastic Sealed Transistor
Application : Electronic Products
Voltage - Peak Reverse (Max) : 1000V