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5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB. in Kuwait 5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB. in Kuwait 5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB. in Kuwait 5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB. in Kuwait 5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB. in Kuwait 5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB. in Kuwait 5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB. in Kuwait

5 قطعة IRFB4227 IRFB 4227 N-قناة MOSFET الترانزستور 65A 200V، TO-220AB.

KWD 3.500
– 1 +

مميزات خاصة

  • High Repetitive Peak Current Capability for Reliable Operation.
  • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low QG for Fast Response
  • Fast Switching Speed
  • 100% avalanche tested,Enhancement mode.

وصف

This MOSFET utilizes the latest processing techniques to achievelow on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°Coperating junction temperature and high repetitive peak current capability.
These features combine tomake this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Transistor polarity: N-Channel
RDS (Conduction) : 0.014 Ohms
Installation style: Through Hole
Gate/source breakdown voltage: 25 V
Package include:
5Pcs *IRFB4227

منتجات شبيهه

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